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www.irf.com 1 hexfet ? power mosfet specifically designed for automotive applications, this hexfet ? power mosfet utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. additional features of this design are a 175c junction operating temperature, fast switching speed and improved repetitive avalanche rating . these features com- bine to make this design an extremely efficient and reliable device for use in automotive applications and a wide variety of other applications. s d g description automotive grade hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ d 2 pak auirfz44vzs auirfz44vzs gds gate drain source s d g d features advanced process technology ultra low on-resistance 175c operating temperature fast switching repetitive avalanche allowed up to tjmax lead-free, rohs compliant automotive qualified * absolute maximum ratings

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.

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"! v (br)dss 60v r ds(on) typ. 9.6m ? max. 12m ? i d 57a parameter units i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t c = 100c continuous drain current, v gs @ 10v a i dm pulsed drain current p d @t c = 25c power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy (thermally limited) mj e as (tested ) single pulse avalanche energy tested value i ar avalanche current a e ar repetitive avalanche energy mj t j operating junction and t stg storage temperature range c soldering temperature, for 10 seconds thermal resistance parameter typ. max. units r jc junction-to-case ??? 1.64 c/w r ja junction-to-ambient (pcb mount) ??? 40 110 73 see fig.12a, 12b, 15, 16 92 0.61 20 max. 57 40 230 -55 to + 175 300 (1.6mm from case ) pd - 96354
2 www.irf.com s d g static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. t y p. max. units v (br)dss drain-to-source breakdown volta g e60??????v ? v (br)dss / ? t j breakdown volta g e temp. coefficient ??? 0.061 ??? v/c r ds(on) static drain-to-source on-resistance ??? 9.6 12 m ? ( .0 .0 0 0 00 00 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. t y p. max. units q g total gate char g e ??? 43 65 q gs gate-to-source char g e ??? 11 ??? nc q gd gate-to-drain ("miller") char g e ??? 18 ??? t d(on) turn-on dela y time ???14??? t r rise time ???62??? t d(off) turn-off dela y time ???35???ns t f fall time ???38??? l d internal drain inductance ??? 4.5 ??? between lead, nh 6mm (0.25in.) l s internal source inductance ??? 7.5 ??? from packa g e and center of die contact c iss input capacitance ??? 1690 ??? c oss output capacitance ??? 270 ??? c rss reverse transfer capacitance ??? 130 ??? pf c oss output capacitance ??? 1870 ??? c oss output capacitance ??? 260 ??? c oss eff. effective output capacitance ??? 510 ??? diode characteristics parameter min. t y p. max. units i s continuous source current ??? ??? 57 (body diode) a i sm pulsed source current ??? ??? 230 (body diode) v sd diode forward volta g e ??? ??? 1.3 v t rr reverse recover y time ??? 23 35 ns q rr reverse recover y char g e ??? 17 26 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) conditions v ds = 25v, i d = 34a i d = 34a v ds = 48v v gs = 20v v gs = -20v conditions v gs = 10v v gs = 0v v ds = 25v ? = 1.0mhz v gs = 0v, v ds = 1.0v, ? = 1.0mhz v gs = 0v, v ds = 48v, ? = 1.0mhz v gs = 0v, v ds = 0v to 48v mosfet symbol showing the integral reverse p-n junction diode. t j = 25c, i s = 34a, v gs = 0v t j = 25c, i f = 34a, v dd = 30v di/dt = 100a/ s conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 34a v ds = v gs , i d = 250a v ds = 60v, v gs = 0v v ds = 60v, v gs = 0v, t j = 125c v gs = 10v v dd = 30v i d = 34a r g = 12 ? notes through are on page 3
www.irf.com 3 repetitive rating; pulse width limited by max. junction temperature. (see fig. 11). limited by t jmax , starting t j = 25c, l = 0.12mh r g = 25 ? , i as = 34a, v gs =10v. part not recommended for use above this value. pulse width 1.0ms; duty cycle 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . limited by t jmax , see fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. this value determined from sample failure population. 100% tested to this value in production, starting t j = 25c, l = 0.12mh r g = 25 ? , i as = 34a, v gs =10v. this is applied to d 2 pak, when mounted on 1" square pcb (fr- 4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994. ? qualification standards can be found at international rectifier?s web site: http//www.irf.com/ ?? exceptions to aec-q101 requirements are noted in the qualification report. ??? highest passing voltage qualification information ? d 2 pak msl1 qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. charged device model class c5(+/- 1125v ) ??? (per aec-q101-005) moisture sensitivity level rohs compliant yes esd machine model class m4(+/- 425v ) ??? (per aec-q101-002) human body model class h1b(+/- 1000v ) ??? (per aec-q101-001)
4 www.irf.com fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. typical forward transconductance vs. drain current 0 102030405060 i d, drain-to-source current (a) 0 10 20 30 40 50 60 g f s , f o r w a r d t r a n s c o n d u c t a n c e ( s ) t j = 25c t j = 175c v ds = 15v 380s pulse width 4.0 5.0 6.0 7.0 8.0 9.0 v gs , gate-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) v ds = 25v 60s pulse width t j = 25c t j = 175c 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60s pulse width tj = 25c 4.5v vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60s pulse width tj = 175c 4.5v vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v
www.irf.com 5 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 0 500 1000 1500 2000 2500 3000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 102030405060 q g total gate charge (nc) 0 4 8 12 16 20 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 48v vds= 30v vds= 12v i d = 34a for test circuit see figure 13 0.2 0.6 1.0 1.4 1.8 v sd , source-todrain voltage (v) 0.1 1.0 10.0 100.0 1000.0 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec
6 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10. normalized on-resistance vs. temperature 25 50 75 100 125 150 175 t j , junction temperature (c) 0 10 20 30 40 50 60 i d , d r a i n c u r r e n t ( a ) -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 34a v gs = 10v 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.960 0.00044 0.680 0.00585 j j 1 1 2 2 r 1 r 1 r 2 r 2 c ci i / ri ci= i / ri
www.irf.com 7 q g q gs q gd v g charge fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 14. threshold voltage vs. temperature r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 50 100 150 200 250 300 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 3.8a 5.0a bottom 34a -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.0 2.0 3.0 4.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a 1k vcc dut 0 l
8 www.irf.com fig 15. typical avalanche current vs.pulsewidth fig 16. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 12a, 12b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figure 11) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav assuming ? tj = 25c due to avalanche losses. note: in no case should tj be allowed to exceed tjmax 0.01 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 20 40 60 80 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1% duty cycle i d = 34a
www.irf.com 9 fig 17.

for n-channel hexfet power mosfets
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? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period
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v ds 90% 10% v gs t d(on) t r t d(off) t f &' 1 (
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www.irf.com 11 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. d 2 pak tape & reel infomation
12 www.irf.com ordering information base part package type complete part number form quantity auirfz44vzs d2pak tube 50 auirfz44vzs tape and reel left 800 AUIRF44VZSTRL tape and reel right 800 auirfz44vzstrr standard pack
www.irf.com 13
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